Research on digital transducer principles, volume 2 Annual report, 1 Jan. - 30 Jun. 1967

Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or discontinuous responses, and chemical vapor deposition of exotic dielectric film

Research on digital transducer principles. Volume 7 - Dielectric properties of thin polymer films, 1 July 1967 - 30 June 1968

Dielectric properties of thin films of polymerized oil-metal-silicon structure

Analysis of low temperature trapping and recombination in II-VI compounds using photodielectric techniques

Using photodielectric effect to detect densities of free and trapped carriers in II-VI compounds at cryogenic temperature

Research on digital transducer principles. Volume 8 - Electrical conduction mechanisms in metal-semiconductor-polymer thin film structures, 1 July - 30 June 1968

Charge transport mechanism in metal semiconductor polymer thin film

Optical properties of materials at low temperature and their application to optical detection

A lumped model to represent the photodielectric effect is developed. An analog simulation for a sample in a microwave cavity with a static magnetic field is developed. A system to measure continuously the PDE is analyzed. A performance factor to compared PD detectors versus ac photoconductors is computed. The operating conditions are defined for the appropriate noise conditions. The detectivity of the detector is found to be limited by the semiconductor sample noise

Research on digital transducer principles. Volume 6 - The photodielectric effect in cadmium sulfide, 1 July 1967 - 30 June 1968

Cadmium sulfide photodielectric effect at cryogenic temperatures with bibliograph

Vapor deposited titanium dioxide thin films - Some properties as a function of crystalline phase

Vapor deposited titanium dioxide thin films - some properties as function of crystalline phas

Research on digital transducer principles. Volume 10 - Thin film titanium dioxide by chemical vapor deposition, 1 July - 31 December 1968

Thin film titanium dioxide by high temperature vapor depositio

Importance of appropriate selection environments for breeding maize adapted to organic farming systems

Organic farming systems, characterized by special attention to soil fertility, recycling techniques and low external inputs, gained increased significance in recent years. As a consequence, there is a growing demand for varieties adapted to organic and/or low input farming. The objectives of the present study were to (i) compare the testcross performance of segregating maize (Zea mays) populations under established organic (OF) and conventional farming (CF) systems, (ii) determine quantitative genetic parameters decisive for the selection response under OF vs CF conditions, and (iii) draw conclusions for breeding new varieties optimally adapted to OF. Testcross performance of four different material groups of preselected lines (90 lines per group) derived from early European breeding material was assessed under OF and CF in three different geographic regions in Germany in 2008. Grain yields under OF were 3 to 18% lower than under CF in the individual experiments depending on the test region and, to a lesser extent, on the genetic material. On average, grain dry matter yield under OF was 1077 g m-2 compared to 1186 g m-2 under CF. Phenotypic correlations between OF and CF were small or moderate for grain yield in each of the four material groups (0.22 to 0.45), while strong and highly significant correlations were found for dry matter content (0.89 to 0.94). Genotypes with top grain yields under OF often did not show this superiority under CF and vice versa. Despite considerable heterogeneity of the OF test sites, the heritability for grain yield was in the same order of magnitude under OF and CF. It is concluded that test sites managed by OF are indispensable for making maximum progress in developing maize varieties for these conditions

TiO2 film properties as a function of processing temperature, volume 3

Thin film TiO2 was produced at 150 C by chemical vapor deposition using hydrolysis of tetraisopropyl titanate. Films were amorphous as grown, but annealing in air caused crystallization, with anatase formed beginning at 350 C and rutile at 700 C. Density and index of refraction increased substantially with increasing anneal temperature, while etch susceptibility in HF and H2SO4 decreased. Comparison with literature data showed two groups of processes. One group yields films having properties that gradually approach those of rutile with increasing process temperature. The other group gives rutile directly at moderate temperatures. Deposition of amorphous film followed by etching and annealing is suggested as a means for pattern definition